Circuit for preventing static electricity and display device having the same

ABSTRACT

A static electricity prevention circuit of a display device including: a driving circuit configured to drive a display unit that displays an image, at least one clock signal wire configured to transmit a clock signal to the driving circuit, at least one transistor electrically coupled to the dock signal wire, and at least one capacitor including a first electrode coupled to a source electrode and to a drain electrode of the transistor, and a second electrode configured to be maintained at a voltage,

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2013-0009434 filed in the Korean IntellectualProperty Office on Jan. 28, 2013, the entire contents of which areincorporated herein by reference.

BACKGROUND

(a) Field

Embodiments of the present invention relate to a static electricityprevention circuit and a display device including the same.

(b) Description of the Related Art

In general, a flat display device such as an organic light emittingdiode (OLEO) display has several advantages, as compared to a cathoderay tube display, such as a decrease in size, thickness, and powerconsumption, and is capable of realizing images of full-color and highresolution. These advantages have led to fiat display devices beingwidely applied in various fields. Currently, the OLED display device hasbeen used in computers, laptops, phones, TVs, audio/video devices, andthe like.

Such an OLED display displays an image by controlling the amount ofdriving current transmitted to an organic light emitting elementaccording to an image data signal applied to each of a plurality ofpixels arranged in a matrix format.

Generally, a glass substrate is used as a substrate of the displaydevice, but the glass substrate also acts as an insulator, so staticelectricity charges created during a panel manufacturing process collecton the glass substrate, thus causing foreign particles such as dusts tobe easily attached to the glass substrate, thereby causing a processfailure. Further, elements in the panel can be damaged due to the staticelectricity; therefore it is desirable for the collection of staticelectricity to be prevented in the flat display panel.

Conventionally, a wire or a resistor for shielding static electricity isinserted into an edge of the display panel. In addition, a staticelectricity prevention circuit using a diode is installed between a wirefor supplying a power source voltage for driving the display panel and awire for supplying a signal for a lighting test.

However, as the display size has increased, the occurrence of staticcharge has become more frequent during the manufacturing process andmodule assembling, Thus, the conventional art, such as the wire or theresistor for shielding static electricity, cannot effectively preventstatic electricity from occurring in the large-sized display panel. Inaddition, when the static electricity prevention circuit is installed,damage caused by a short-circuit may frequently occur due to incidentssuch as a burst occurring in the static electricity prevention circuitas a result of high potential difference that is caused by the staticelectricity. Accordingly, driving of the display panel may fail.

Therefore, design of a display panel that is resistant to staticelectricity is used to prevent driving failure of the display panel, andto prevent damage to the display panel of the OLED display due to burstdamage to the static electricity prevention circuit, and at the sametime to effectively prevent occurrence of static electricity in thelarge-sized display panel.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the invention, andtherefore it may contain information that does not form the prior artthat is already known in this country to a person of ordinary skill inthe art.

SUMMARY

An example embodiment of the present invention may prevent inflow andoccurrence of static electricity in a display panel to preventmalfunction and damage in the display panel, and to preventmanufacturing process failure of the display device due to the staticelectricity.

In addition, a static electricity prevention design circuit that can beeffectively applied to a large-sized display panel can be provided toavoid driving failure due to the inflow of the static electricity in thedisplay device, thereby providing a display panel having excellentquality.

According to one aspect of the present invention, there is provided astatic electricity prevention circuit of a display device including: adriving circuit configured to drive a display unit that displays animage; at least one dock signal wire configured to transmit a clocksignal to the driving circuit, at least one transistor electricallycoupled to the dock signal wire; and at least one capacitor including afirst electrode coupled to a source electrode and to a drain electrodeof the transistor, and a second electrode configured to be maintained ata voltage.

The dock signal wire may be coupled with a gate electrode of thetransistor through a gate metal wire.

The transistor may include: a semiconductor layer including animpurity-doped area doped with a semiconductor impurity, and anintrinsic semiconductor area not doped with any semiconductor impurity;a gate electrode layer on the semiconductor layer; and a gate insulationlayer between the gate electrode layer and the semiconductor layer,wherein the gate insulation layer is configured to create an electricalopen or an electrical short-circuit by a static electricity currentflowing through the clock signal wire.

The impurity-doped area of the semiconductor layer may include: a firstimpurity-doped area; and a second impurity-doped area opposite to thefirst impurity-doped area and electrically coupled to a portion of thefirst impurity-doped area not overlapping the gate electrode layer.

The static electricity prevention circuit may further include acapacitor including a first electrode that is electrically coupled tothe impurity-doped area of the semiconductor layer, the capacitor beingconfigured to accumulate an inflow static electricity current when thegate insulation layer is short-circuited.

According to another aspect the present invention, there is provided adisplay device including: a display unit including a plurality of pixelsconfigured to display an image by emitting light based on a data voltagecorresponding to an image data signal; a driving circuit configured todrive the display unit; at least one dock signal wire configured totransmit a dock signal to the driving circuit; and a static electricityprevention circuit including: at least one transistor electricallycoupled to the dock signal wire; and at least one capacitor including afirst electrode coupled to both of a source electrode and a drainelectrode of the transistor, and a second electrode configured to beapplied with a fixed voltage.

The static electricity prevention circuit may be coupled between thedock signal wire and the driving circuit.

The dock signal wire may be coupled to a gate electrode of thetransistor of the static electricity prevention circuit through a gatemetal wire.

The transistor may include: a semiconductor layer including animpurity-doped area that is doped with a semiconductor impurity and iselectrically coupled to the first electrode of the capacitor, and anintrinsic semiconductor layer that is not doped with any semiconductorimpurity; a gate electrode layer on the semiconductor layer; and a gateinsulation layer between the gate electrode layer and the semiconductorlayer.

The impurity-doped area of the semiconductor may include: a firstimpurity-doped area; and a second impurity-doped area opposite to thefirst impurity-doped area and electrically coupled to a portion of thefirst doped-impurity area not overlapping the gate electrode layer.

The gate insulation layer may be configured to cause an electrical opencircuit or to an electrical short-circuit due to a static electricitycurrent flowing through at least one clock signal wire.

The display device may further include a capacitor including a firstelectrode that is electrically coupled to the impurity-doped area of thesemiconductor layer, the capacitor being configured to accumulate aninflow static electricity current when the gate insulation layer isshort-circuited.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing a static electricity preventioncircuit of a display panel, according to an example embodiment of thepresent invention.

FIG. 2 is a circuit diagram of a basic unit of the static electricityprevention circuit of the embodiment shown in FIG. 1, according to anexample embodiment of the present invention.

FIG. 3 is an enlarged cross-sectional view of a portion in the staticelectricity prevention circuit of the embodiment shown in FIG. 1, takenalong the line B-B′, according to the example embodiment of the presentinvention shown in FIG. 1.

DETAILED DESCRIPTION

Hereinafter, embodiments of the present invention will be described morefully with reference to the accompanying drawings, in which exampleembodiments of the invention are shown. As those skilled in the artwould realize, the described embodiments may be modified in variousdifferent ways, all without departing from the spirit or scope of thepresent invention.

The unrelated parts to the description of the example embodiments may beomitted to make the description dear. Further, like reference numeralsdesignate like element throughout the specification.

Throughout this specification and the claims that follow, when it isdescribed that an element is “coupled” to another element, the elementmay be “directly coupled” to the other element, or may be “electricallycoupled” to the other element through one or more other elements. Inaddition, unless explicitly described to the contrary, the word“comprise,” and variations such as “comprises” or “comprising,” will beunderstood to imply the inclusion of stated elements, although notnecessarily to the exclusion of any other elements.

FIG. 1 is a schematic diagram showing a static electricity preventioncircuit of a display panel, according to an example embodiment of thepresent invention.

Referring to FIG. 1, the static electricity prevention circuit of thedisplay panel, according to the present example embodiment of thepresent invention, is provided in a display device. In an exampleembodiment, the static electricity prevention circuit is provided in thedisplay device that includes a display panel (or display unit) includinga plurality of pixels for displaying an image and a driving circuit fordriving the display panel. In further detail, the static electricityprevention circuit may be provided between the driving circuit and aplurality of clock signal wires CL1 to CL4 for transmitting a clocksignal to the driving circuit. In FIG. 1, the static electricityprevention circuit may be provided in one side of the plurality of docksignals.

That is, the static electricity prevention circuit, according to thepresent example embodiment of the present invention, may be respectivelyelectrically coupled (or electrically connected) to the clock signalwires to prevent, or to reduce the likelihood of, electrostaticdischarge (ESD) flowing through the clock signal wires that transmitclock signals (e.g., predetermined clock signals) to the drivingcircuit, which transmits a gate signal or a scan signal to a pixel unitformed of a plurality of pixels that display an image, or to a datasource output circuit in the display panel.

Referring to FIG. 1, the static electricity prevention circuit,according to the present example embodiment, is formed of staticelectricity prevention transistors and capacitors respectively coupled(or connected) to the dock signal wires CL1 to CL4.

That is, static electricity prevention circuits are electrically coupledto at least one of the plurality of dock signal wires, which transmitthe plurality of dock signals, and are electrically coupled tocapacitors, each of which has a first electrode electrically coupledwith a source electrode and a drain electrode of the static electricityprevention transistor.

FIG. 1 illustrates that the static electricity prevention circuit,according to the present example embodiment, includes three staticelectricity prevention transistors T1-T3 and three capacitors C1-C3,although the present invention is not limited thereto. The staticelectricity prevention circuit may include a plurality of staticelectricity prevention transistors and a plurality of capacitorscorresponding to the plurality of clock signal wires. In FIG. 1, astatic electricity prevention transistor T1 of the first line includes asource electrode 1S and a drain electrode 1D, which are coupled to oneanother in the same line, and a gate electrode 15 formed on top of thesource electrode 1S and the drain electrode 1D, with a gate insulationlayer interposed between the gate electrode 1G and the source and drainelectrodes 1S and 1D. The source electrode 1S and the drain electrode 1Dof the static electricity prevention transistor T1 of the first line arecoupled to one another at lower portions thereof, and are separated fromeach other in upper portions where the gate electrode 1G is layered.

In addition, the gate electrode 1G of the static electricity preventiontransistor T1 is electrically coupled with the corresponding dock signalline CL3 through a gate metal wire GL1. The dock signal wire CL3 and thegate metal wire GL1 are electrically coupled through a plurality ofcontact holes CH, and the gate metal wire GL1 is extended in one side ofthe dock signal wires and is electrically coupled with the gateelectrode 1G of the static electricity prevention transistor T1 througha contact hole.

In addition, the source electrode 1S and the drain electrode 1D, coupledwith each other in the lower side of the static electricity preventiontransistor T1, are both coupled to a first electrode CE1 of thecapacitor C1 of the first line in the same layer. The capacitor C1 ofthe first line is formed of the first electrode CE1 coupled with both ofthe source electrode 1S and the drain electrode 1D of the staticelectricity prevention transistor T1, an insulation layer layered on thefirst electrode CE1, and a second electrode FE layered on the insulationlayer. As shown in FIG. 1, as a single conductive layer, the secondelectrode FE is a second electrode to each of the capacitors C1 to C3forming the static electricity prevention circuit. A fixed voltage(e.g., a predetermined fixed voltage) is applied through the secondelectrode FE, and electrodes on one side of the plurality of capacitorsforming the static electricity prevention circuit are set to a voltageof the fixed voltage.

In the example embodiment of FIG. 1, a static electricity preventiontransistor and a capacitor that are coupled corresponding to the clocksignal are formed in each line with the above-stated structure. That is,the static electricity prevention transistor T2 and the capacitor C2 arecoupled to the clock signal wire CL2, and the static electricityprevention transistor T3 and the capacitor C3 are coupled to the clocksignal wire CL1

The gate metal wires GL1 to GL3, which respectively electrically connectthe clock signal wires CL1 to CL3 to the static electricity preventioncircuit, are metal wires that are coupled for transmission of the clocksignals to the driving circuits such as a data source output circuit, agate driver, a scan driver, and the like. The static electricityprevention circuit, which is coupled with the metal wires GL1 to GL3between the clock signal wires and the driving circuit, is provided toprevent static electricity from flowing through the clock signal wiresin the event that a gate metal wire that does not follow an antenna rulein a panel process is included in the gate metal wires.

Here, “not following the antenna rule” means that the ratio of an areaof the extended gate metal wires to an area of the gate electrodes ofthe transistors coupled with the gate metal wires is greater than aparticular value.

Herein, the operation of the static electricity prevention circuit,according to an example embodiment of the present invention, will bedescribed. As shown in FIG. 1, when an external static electricity flowsthrough the clock signal wire CL2, the gate insulation layer of thestatic electricity prevention transistor T2 coupled to the gate metalwire GL2, which does not follow the antenna rule, is burnt, or damaged,so as to prevent the external static electricity from being transmittedto other circuit elements in the display panel. That is, staticelectricity prevention transistors that are not related to circuitoperation of the image display in the display panel are added, and thus,when static electricity flows in through a part of the plurality ofclock signal wires, a high or low static electricity current is inducedto an added static electricity transistor, and the thinnest gateinsulation layer among the static electricity prevention transistors isburnt to thereby protect the driving circuit of the display panel.

The present example embodiment of the present invention is not limitedto FIG. 1, and at least one static electricity prevention circuit may beformed in a gate metal wire that couples the clock signal wire and thedriving circuit.

To conduct (or induct) the external static electricity current to thestatic electricity prevention transistor, the second electrode FE of thecapacitor, which is coupled with the source electrode and the drainelectrode of the static electricity prevention transistor, is appliedwith a fixed voltage and is maintained at the fixed voltage. The firstelectrode of the capacitor is coupled with the source electrode and thedrain electrode of the static electricity prevention transistor toprevent an electrical short-circuit between the two electrodes of thecapacitor during the conducting (or induction) of the staticelectricity, and the second electrode FE of the capacitor is coupled toa supply source of the fixed voltage.

Here, the meaning of the burning the gate insulation layer of the staticelectricity transistor by inducing the static electricity current may bechanged depending on the amount of high-or-low-level static electricitycurrent, but it implies that the static electricity current affects thegate insulation layer of the static electricity prevention circuit,thereby causing an electrical open (e.g., electrical open-circuit) or anelectrical short-circuit.

When the static electricity prevention transistor is electricallyopened, flow of electricity is ceased (or disconnected) so that externalstatic electricity does not influence the operation of the circuitelements in the display panel. In addition, when the static electricityprevention transistor is electricity short-circuited, an excessiveamount of current flows through the static electricity preventiontransistor, although the current is accumulated only in the firstelectrode of the capacitor, which is coupled with the source-drainelectrode of the static electricity prevention transistor so that thecorresponding capacitor maintains a voltage that is charged by as muchas a difference between a static electricity voltage of the firstelectrode and the fixed voltage of the second electrode. Accordingly,the external static electricity can be prevented from flowing into thedriving circuit of the display panel via the dock signal wires and thegate metal wires.

FIG. 2 is a circuit diagram illustrating a basic unit “A” of the staticelectricity prevention circuit of FIG. 1, according to the presentexample embodiment of the present invention.

At least one transistor and at least one capacitor coupled to a gatemetal wire that is electrically coupled with a corresponding one of aplurality of dock signal wires comprise a basic unit in the exampleembodiment of the present invention, and accordingly, the staticelectricity prevention circuit includes a plurality of such transistorsand a plurality of such capacitors.

Thus, the portion “A” is a basic unit of the static electricityprevention circuit, according to the present example embodiment of thepresent invention, and is a portion of the static electricity preventioncircuit coupled to one of the plurality of dock signal wires (e.g., CL3in FIG. 1). For example, the portion “A” includes as static electricityprevention transistor T1 and a capacitor C1 of the first line that iscoupled with a gate metal wire GL1, which is coupled with the docksignal wire CL3 in FIG. 3.

The static electricity prevention transistor T1 includes a gateelectrode 1G coupled with the gate metal wire GL1, which a clock signalor an external static electricity voltage is applied to, a sourceelectrode 13, and a drain electrode 1D. The source electrode 13 and thedrain electrode 1D are commonly coupled to a first node N1.

The capacitor C1 includes a first electrode that is coupled to the firstnode N1, and a second electrode that is coupled to a supply source thattransmits a fixed voltage VDH.

When an external static electricity current is induced to the gateelectrode 1G of the static electricity prevention transistor T1, andthus to a gate insulation layer, that is, a lower layer of the gateelectrode is short-circuited, the capacitor C1 accumulates an excessivestatic electricity current in the first electrode. In addition, thecapacitor C1 is charged with a voltage corresponding to a differencebetween the static electricity voltage accumulated in the firstelectrode and the fixed voltage PDH applied to the second electrode, andis maintained with the charged voltage. Then, the static electricity canbe stored in the static electricity prevention circuit so that thestatic electricity cannot affect other circuit elements in the displaypanel, thereby protecting the display device from the staticelectricity.

Alternatively, when external static electricity is induced to the gateelectrode 1G of the static electricity prevention transistor T1, thegate insulation layer, that is, the lower layer of the gate electrode,is electrically opened and thus electrically decoupled so that thestatic electricity cannot affect other circuit elements of the displaypanel.

FIG. 3 is an enlarged cross-sectional view of the static electricityprevention circuit of FIG. 1, taken along the line B-B′ of FIG. 1,according to the present example embodiment of the present invention.

Although not illustrated in FIG. 3, an insulation substrate may beprovided depending on each constituent means in the lowest portion (orregion) of the cross-sectional structure of the portion taken along theline B-B′.

That is, an insulation substrate and a buffer layer formed of siliconoxide may be formed in the lowest portions (or regions) of the staticelectricity prevention transistor T2 and the capacitor C2, but becausesuch technical content is known in the art, further description of thecross-section of the static electricity prevention circuit structurewill not be provided.

In addition, the line B-B′ is a line extended from the clock signal wireCL2 and then passing through the two dock signal wires CL3 and CL4, butfor better comprehension and ease of description, the dock signal wiresCL3 and CIA that are not electrically coupled with the staticelectricity prevention transistor T2 will be omitted from FIG. 3.

Referring to FIG. 3, first, a semiconductor layer SCL of the staticelectricity prevention transistor T2 is formed. The semiconductor layerSCL may be formed of, for example, polysilicon (Poly-Si).

A gate insulation layer 20 is formed on the semiconductor layer SCL. Aconstituent material of the gate insulation layer 20 is not specificallyrestrictive, and may, for example, comprise: an inorganic material suchas silicon oxide (SiO₂), silicon nitride (SiNx), and the like; acombination of the inorganic materials; and/or an organic material suchas polyvinylpheno (PVI), polyimide, and the like. In general, the gateinsulation layer 20 is the thinnest layer, so that it may be burnt inthe static electricity prevention transistor due to inflow of staticelectricity and thus may cause an electrical open or electricalshort-circuit.

After the gate insulation layer 20 is formed, a gate electrode layer 50is formed by patterning in a portion above an area where thesemiconductor layer SCL is formed,

After the gate electrode layer 50 is patterned, an impurity is dopedusing the gate electrode layer 50 as a doping prevention layer, and inthe example embodiment of FIG. 3, a p-type impurity is doped so thatp-type impurity doping areas 11 and 12 are formed. An intrinsicsemiconductor layer area 10 that is not doped with an impurity remainsin the semiconductor layer SCL below a portion of the gate electrodelayer 50.

The p-type impurity doping areas 11 and 12 may respectively be formed assource and drain electrodes. Although it is not illustrated in FIG. 3,the p-type impurity doping areas 11 and 12 may be coupled with eachother so that a common node may be formed in another location of thestatic electricity prevention transistor T2. In addition, a conductivelayer 70 of the capacitor C2 is formed in the same layer as the commonnode. That is, the p-type impurity doping areas 11 and 12 are coupledwith each other and the conductive layer 70 is coupled with the p-typeimpurity doping areas 11 and 12, and forms a first electrode CE2 of thecapacitor C2.

Meanwhile, a clock signal wire 40 may be formed by patterning in an area(e.g., a predetermined area) after the gate insulation layer 20 isformed. However, the present embodiment is not limited thereto, and theclock signal wire 40 may be formed through a process that is separatefrom a process of forming the static electricity prevention circuit.

The clock signal wire 40 is a metal wire for transmitting a clock signalto the driving circuit from a controller. A material forming the metalwire is not restrictive, and may be a conductive material or an alloythereof. For example, the metal wire may be formed of a metal materialsuch as molybdenum (Mo), tantalum (Ta), cobalt (Co), and the like or analloy thereof.

After the gate electrode layer 50 is formed, an interlayer insulationlayer 30 may be formed on the gate electrode layer 50. FIG. 3illustrates that the interlayer insulation layer 30 is formed such thatit extends to an upper portion of the dock signal wire 40, but theexample embodiment is not limited thereto.

A material of the interlayer insulation layer 30 is not particularlyrestrictive, but, like the gate insulation layer 20, the interlayerinsulation layer 30 may, for example, be formed of: an inorganicmaterial such as silicon oxide (SiO₂), silicon nitride (SiNx), and thelike; a combination of the inorganic materials; or an organic materialsuch as polyvinylphenol (PVP), polyimide, and the like. In FIG. 3, theinterlayer insulation layer 30 is formed as a single layer, but may beformed of at least two layers. In addition, the interlayer insulationlayer 30 may be formed of the same insulation material of the gateinsulation layer, or may be formed of a different material.

After the interlayer insulation layer 30 is formed, the clock signalwire 40 and the gate electrode layer 50 are partially exposed bypatterning, and then a gate metal wire 60 (e.g., GL2) is formed. Thegate metal wire 60 (GL2) may be formed of a conductive metallicmaterial, although it is not limited thereto. For example, the gatemetal wire 60 may be formed of a conductive material, such as titanium(Ti), aluminum (Al), and the like, or an alloy thereof.

The gate metal wire 60 (GL2) electrically connects the clock signal wire40, which has been patterned and exposed, and the gate electrode layer50 through the contact holes in the interlayer insulation layer 30 thatexpose the clock signal wire 40 and the gate electrode layer 50.

Hence, the static electricity current flowing from the clock signal wire40 is transmitted to the gate electrode layer 50. Then, the gateinsulation layer 20, being between the gate electrode layer 50 and thesemiconductor layer SCL, is burnt and thus electrically opened orshort-circuited.

Meanwhile, after the conductive layer is formed as the first electrode70 of the capacitor C2, an insulation layer 80 is layered thereon. Then,a conductive layer is formed on the insulation layer 80 as a secondelectrode 90 of the capacitor C2. A fixed voltage may be applied to thesecond electrode 90. Thus, when the gate insulation layer 20 of thestatic electricity prevention transistor T2 is short-circuited due tostatic electricity current, the static electricity current is collectedin the first electrode 70 of the capacitor C2, to which the sourceelectrode and the drain electrode, which are the impurity-doped areas 11and 12 of the semiconductor SCL, are coupled. As a result, the staticelectricity current does not flow into other circuit elements of thedisplay panel.

In the example embodiment of FIG. 3, layers that can be formed in theupper portions of the gate metal wire 60 (GL2) and the second electrode90 of the capacitor C2 may be known layers, such as an interlayerinsulation layer, a protection layer, and the like, and those layers canbe formed through a manufacturing process of a display panel. As thisrepresents common knowledge in the art, no further description will beprovided.

While this invention has been described in connection with what ispresently considered to be practical example embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims. Accordingly, those skilled in the art canchoose and replace from the detailed description. Further, a person ofordinary skill in the art may remove a part of the constituent elementsdescribed in the specification without deterioration of performance oradd constituent elements to improve performance. In addition, a personof ordinary skill in the art may change the order of the steps of themethod described in the specification depending on process environmentor equipment. Therefore, it is intended that the scope of the inventionbe defined by the claims appended hereto, and their equivalents.

DESCRIPTION OF SOME OF THE REFERENCE CHARACTERS

-   CL1, CL2, CL3, CL4: dock signal wire-   GL1, GL2, GL3: gate metal wire-   T1, T2, T3: static electricity prevention transistor-   C1, C2, C3: capacitor-   10: intrinsic semiconductor layer area-   11, 12; p-type impurity doping area

20: gate insulation layer 30: interlayer insulation layer 40: clocksignal wire 50: gate electrode layer 60: gate metal wire 70: firstelectrode of capacitor 80: insulation layer 90: second electrode ofcapacitor

What is claimed is:
 1. A static electricity prevention circuit of adisplay device comprising: a driving circuit configured to drive adisplay unit that displays an image; at least one dock signal wireconfigured to transmit a dock signal to the driving circuit, at leastone transistor electrically coupled to the clock signal wire; and atleast one capacitor comprising a first electrode coupled to a sourceelectrode and to a drain electrode of the transistor, and a secondelectrode configured to be maintained at a voltage.
 2. The staticelectricity prevention circuit of claim 1, wherein the clock signal wireis coupled with a gate electrode of the transistor through a gate metalwire.
 3. The static electricity prevention circuit of claim 1, whereinthe transistor comprises: a semiconductor layer comprising animpurity-doped area doped with a semiconductor impurity, and anintrinsic semiconductor area not doped with any semiconductor impurity;a gate electrode layer on the semiconductor layer; and a gate insulationlayer between the gate electrode layer and the semiconductor layer,wherein the gate insulation layer is configured to create an electricalopen or an electrical short-circuit by a static electricity currentflowing through the clock signal wire.
 4. The static electricityprevention circuit of claim 3, wherein the impurity-doped area of thesemiconductor layer comprises: a first impurity-doped area; and a secondimpurity-doped area opposite to the first impurity-doped area andelectrically coupled to a portion of the first impurity-doped area notoverlapping the gate electrode layer.
 5. The static electricityprevention circuit of claim 3, further comprising a capacitor comprisinga first electrode that is electrically coupled to the impurity-dopedarea of the semiconductor layer, the capacitor being configured toaccumulate an inflow static electricity current when the gate insulationlayer is short-circuited.
 6. A display device comprising: a display unitcomprising a plurality of pixels configured to display an image byemitting light based on a data voltage corresponding to an image datasignal; a driving circuit configured to drive the display unit; at leastone dock signal wire configured to transmit a clock signal to thedriving circuit; and a static electricity prevention circuit comprising:at least one transistor electrically coupled to the dock signal wire;and at least one capacitor comprising a first electrode coupled to bothof a source electrode and a drain electrode of the transistor, and asecond electrode configured to be applied with a fixed voltage.
 7. Thedisplay device of claim 6, wherein the static electricity preventioncircuit is coupled between the dock signal wire and the driving circuit.8. The display device of claim 6, wherein the clock signal wire iscoupled to a gate electrode of the transistor of the static electricityprevention circuit through a gate metal wire.
 9. The display device ofclaim 6, wherein the transistor comprises: a semiconductor layercomprising an impurity-doped area that is doped with a semiconductorimpurity and is electrically coupled to the first electrode of thecapacitor, and an intrinsic semiconductor layer that is not doped withany semiconductor impurity; a gate electrode layer on the semiconductorlayer; and a gate insulation layer between the gate electrode layer andthe semiconductor layer.
 10. The display device of claim 9, wherein theimpurity-doped area of the semiconductor comprises: a firstimpurity-doped area; and a second impurity-doped area opposite to thefirst impurity-doped area and electrically coupled to a portion of thefirst impurity-doped area not overlapping the gate electrode layer. 11.The display device of claim 9, wherein the gate insulation layer isconfigured to cause an electrical open circuit or to an electricalshort-circuit due to a static electricity current flowing through atleast one clock signal wire.
 12. The display device of claim 11, furthercomprising a capacitor comprising a first electrode that is electricallycoupled to the impurity-doped area of the semiconductor layer, thecapacitor being configured to accumulate an inflow static electricitycurrent when the gate insulation layer is short-circuited.